Pubblicazioni

ELECTRICAL CHARACTERIZATION OF CdTe SOLAR CELLS MADE BY A LOW TEMPERATURE FABRICATION PROCESS  (2011)

Autori:
Rimmaudo, Ivan; Salavei, Andrei; Allodi, Valentina; Romeo, Alessandro; P., Zabierowski; T., Drobiazg; A., Bosio; N., Romeo; S., Mazzamuto; D., Menossi
Titolo:
ELECTRICAL CHARACTERIZATION OF CdTe SOLAR CELLS MADE BY A LOW TEMPERATURE FABRICATION PROCESS
Anno:
2011
Tipologia prodotto:
Contributo in atti di convegno
Tipologia ANVUR:
Contributo in Atti di convegno
Lingua:
Inglese
Formato:
Elettronico
Titolo del Convegno:
26th European Photovoltaic Solar Energy Conference and Exhibition
Luogo:
Hamburg, Germany
Periodo:
5-9, September, 2011
Casa editrice:
WIP-Renewable Energies
ISBN:
3936338272
Intervallo pagine:
3040-3044
Parole chiave:
CdTe; Electrical Properties; Admittance Spectroscopy
Breve descrizione dei contenuti:
In our laboratory CdTe solar cells are prepared by vacuum evaporation process (VE) with analternative activation treatment that avoids the use of CdCl2. This process consists of flowing chlorine containing gasnamely difluorochloromethane (Freon® R-22) and Argon into a quartz crystal tube at temperatures in the range of400-440°C and subsequent air annealing. The process substitutes the typical CdCl2 activation treatment, avoidingdeposition of CdCl2. Back contact is made by deposition of standard Cu/Au stacks. Different solar cells with Freonand CdCl2 treatment have been made and compared also with cells prepared by close space sublimation process(CSS) and Freon activation.Finished devices are analyzed by current-voltage and capacitance voltage at different temperatures, admittance anddrive level capacitance spectroscopy have been performed and the properties are correlated with the deposition andactivation parameters. Doping concentrations, defect densities, ideality factor and diode barrier height are calculatedaccording to the different deposition and post-deposition parameters.Measurements have shown a high density of deep defects of the low temperature deposited CdTe devices comparedto CSS deposited samples that result to have higher carrier concentration. Doping concentration of the CdTe and bandgap profiling is strictly depending on the above mentioned parameters.A preliminary analysis on the defect identification by admittance and deep level transient spectroscopy has beenperformed and discussion on the possible interpretation of deep defects presence and lack of shallow defects issuggested.
Note:
L'ultimo autore è da considerare A. Romeo, quelli successivi sono collaboratori appartenenti ad altri laboratori che hanno collaborato in parte.
Pagina Web:
http://www.eupvsec-proceedings.com/proceedings?fulltext=Romeo&paper=11508
Id prodotto:
63419
Handle IRIS:
11562/370401
depositato il:
11 luglio 2012
ultima modifica:
1 novembre 2022
Citazione bibliografica:
Rimmaudo, Ivan; Salavei, Andrei; Allodi, Valentina; Romeo, Alessandro; P., Zabierowski; T., Drobiazg; A., Bosio; N., Romeo; S., Mazzamuto; D., Menossi, ELECTRICAL CHARACTERIZATION OF CdTe SOLAR CELLS MADE BY A LOW TEMPERATURE FABRICATION PROCESS  in Proceedings of 26th European Photovoltaic Solar Energy Conference and ExhibitionWIP-Renewable EnergiesAtti di "26th European Photovoltaic Solar Energy Conference and Exhibition" , Hamburg, Germany , 5-9, September, 2011 , 2011pp. 3040-3044

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Titolo Dipartimento Responsabili
ALPINE - Advanced Lasers for Photovoltaic INdustrial processing Enhancement Dipartimento Informatica Alessandro Romeo
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